N-Type TOPCon
- Uses an n-type silicon base, usually doped with phosphorus.
- Adds an ultrathin tunnel oxide plus a doped polysilicon layer on the rear.
- Creates a passivated contact that lets charge carriers through while reducing recombination.
- Less sensitive to boron-oxygen defects, so it usually starts with a smaller initial decline and then follows a flatter annual curve.
- Often carries a slightly better temperature coefficient and responds better in weak light.





